首页> 外国专利> CONTROL METHOD FOR FERROMAGNETIC RESONANCE FREQUENCY USING CARRIER INDUCING FERROMAGNETIC MATERIAL AND FREQUENCY FILTER ELEMENT USING IT

CONTROL METHOD FOR FERROMAGNETIC RESONANCE FREQUENCY USING CARRIER INDUCING FERROMAGNETIC MATERIAL AND FREQUENCY FILTER ELEMENT USING IT

机译:载流子感应铁磁材料的铁磁谐振频率控制方法及使用它的频率滤波器

摘要

PROBLEM TO BE SOLVED: To provide a frequency filter capable of modulating a resonant frequency by control from outside.;SOLUTION: The frequency filter element comprises a multi-layer structure where an insulating layer 3 composed of i-AlGaAs is laminated on a conductive substrate 1 composed of n+-GaAs, and then a thin film 5 of a ferromagnetic semiconductor (semiconductor in which Mn, a magnetic metal, is doped to GaAs) Ga1-xMnxAs layer is laminated on top of it. Magnetization M is turned in a specific direction using magnetic anisotropy peculiar to GaMnAs. An insulating film 7 is formed to the GaMnAs layer 5. A metallic electrode 11 for field application is formed on the insulating film 7. Microwaves are radiated to the element. When a electric field vector is parallel to magnetization (orthogonal to magnetic field), it combines with magnetization. When the electric field vector is orthogonal to magnetization, it does not combine with magnetization. A control means for controlling a carrier density can adjust a resonant frequency ω determined by external magnetic field/magnetization/anisotropy constants.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种能够通过外部控制来调制谐振频率的频率滤波器;解决方案:频率滤波器元件包括多层结构,其中由i-AlGaAs构成的绝缘层3层压在导电基板上1由n + -GaAs组成,然后由铁磁半导体(其中磁性金属Mn掺杂到GaAs中的半导体)Ga 1-x Mn x As层被层压在其顶部。使用GaMnAs特有的磁各向异性将磁化M沿特定方向旋转。在GaMnAs层5上形成绝缘膜7。在绝缘膜7上形成用于现场施加的金属电极11。微波辐射到元件。当电场矢量平行于磁化强度(垂直于磁场)时,它将与磁化强度结合。当电场矢量与磁化强度正交时,它不会与磁化强度结合。用于控制载流子密度的控制装置可以调节谐振频率ω。由外部磁场/磁化强度/各向异性常数确定。;版权:(C)2006,JPO&NCIPI

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