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Hydrogen-related complexes in Li-diffused ZnO single crystals

机译:锂扩散ZnO单晶中的氢相关配合物

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摘要

Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li_2O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>10~(19)cm~(-3)). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm~(-1), attributed to surface O-H species. When Li_2CO_3 is used, a structured blue luminescence band and O-H mode at 3327 cm~(-1) are observed at 10 K. These observations, along with positron annihilation measurements, suggest a zinc vacancy-hydrogen complex, with an acceptor level ~0.3eV above the valence-band maximum. This relatively shallow acceptor could be beneficial for p-type ZnO.
机译:氧化锌(ZnO)是一种宽带隙半导体,是下一代白色固态照明应用的潜在候选者。在这项工作中,研究了锂扩散的ZnO单晶中与氢有关的配合物。除了众所周知的Li-OH络合物,还观察到其他一些氢缺陷。当使用Li_2O和ZnO的混合物作为掺杂源时,锌的空位受到抑制,且整体Li浓度非常高(> 10〜(19)cm〜(-3))。在这种情况下,主要的氢络合物的振动频率为3677 cm〜(-1),这归因于表面O-H物种。当使用Li_2CO_3时,在10 K下观察到3327 cm〜(-1)处的结构化蓝色发光带和OH模式。这些观察结果以及正电子an灭测量表明,锌空位-氢络合物的受主水平为〜0.3 eV高于价带最大值。这种相对较浅的受体可能对p型ZnO有利。

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  • 来源
    《Journal of Applied Physics》 |2016年第3期|035703.1-035703.5|共5页
  • 作者单位

    Materials Science and Engineering Program, Washington State University, Pullman, Washington 99164-2814, USA;

    Center for Materials Research, Washington State University, Pullman, Washington 99164-2814, USA;

    Center for Materials Research, Washington State University, Pullman, Washington 99164-2814, USA;

    Materials Science and Engineering Program, Washington State University, Pullman, Washington 99164-2814, USA,Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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