机译:离子注入和脉冲激光熔化法合成Ge_(1-x)Sr_x合金:面向Ⅳ族直接带隙材料
Department of Electronic Materials Engineering, Research School of Physics and Engineering,Australian National University, Canberra, Australian Capital Territory 0200, Australia;
Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge,Massachusetts 02138, USA;
Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge,Massachusetts 02138, USA;
Department of Electronic Materials Engineering, Research School of Physics and Engineering,Australian National University, Canberra, Australian Capital Territory 0200, Australia;
School of Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue,Cambridge, Massachusetts 02139, USA;
Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge,Massachusetts 02138, USA;
Department of Electronic Materials Engineering, Research School of Physics and Engineering,Australian National University, Canberra, Australian Capital Territory 0200, Australia;
机译:离子注入和脉冲激光熔化(II-PLM)合成Ge_(1-x)Sn_(x)合金薄膜
机译:离子注入和脉冲激光熔化合成的Ge_(1-x)Sn_x合金
机译:通过脉冲激光熔化固化的离子注入Ge_(1-x)Mn_x薄膜的磁性
机译:通过离子注入和脉冲激光熔化合成Ge-Sn合金:走向IV组直接带隙半导体
机译:离子注入和脉冲激光熔融合成锗锡合金:面向IV族直接带隙半导体
机译:兆赫重复飞秒激光脉冲诱导的不溶混材料的3D纳米结构金属合金的合成
机译:通过离子注入和脉冲激光熔化合成Ge1-Xsnx合金:朝向IV族直接带隙材料