Secondary recrystallization and magnetostriction in binary Fe_(81)Ga_(19) thin sheets

摘要

Strong Goss texture ({110}〈001〉) was successfully developed by secondary recrystallization in Fe_(81)Ga_(19) sheets without conventional application of inhibitor or surface energy effect as grain-oriented silicon steel. Goss grains cover 90% surface area of annealed sheet, and the magnetostriction coefficient reaches up to 262 ppm. The primary recrystallization microstructure and texture provide the prerequisites for nucleation and abnormal grain growth of secondary Goss grains. The dispersedly distributed Goss grains do not exhibit an evident advantage in grain size and number, and the normal grain growth of matrix grains can be inhibited by low-angle grain boundaries before onset of secondary recrystallization. The existence of low-angle grain boundaries is proposed to be an important factor for the occurrence of secondary recrystallization in binary Fe-Ga sheets based on grain boundary character distribution analysis.