首页> 外国专利> MANUFACTURE OF GRAIN ORIENTED SILICON STEEL SHEET HAVING THIN THICKNESS AND HIGH SILICON AND DEVELOPING ZAFFRE AGGREGATE STRUCTURE BY WARM-ROLLING HAVING HIGH ROLLING REDUCTION RATIO JUST BELOW RECRYSTALLIZING TEMPERATURE AND GRAIN ORIENTED SILICON STEEL SHEET HAVING THIN THICKNESS AND HIGH SILICON MANUFACTURED BY THIS MANUFACTURING METHOD

MANUFACTURE OF GRAIN ORIENTED SILICON STEEL SHEET HAVING THIN THICKNESS AND HIGH SILICON AND DEVELOPING ZAFFRE AGGREGATE STRUCTURE BY WARM-ROLLING HAVING HIGH ROLLING REDUCTION RATIO JUST BELOW RECRYSTALLIZING TEMPERATURE AND GRAIN ORIENTED SILICON STEEL SHEET HAVING THIN THICKNESS AND HIGH SILICON MANUFACTURED BY THIS MANUFACTURING METHOD

机译:通过热轧而具有高轧制还原率的硅钢片具有较薄的厚度和高硅含量,并发展了扎弗尔凝集结构,其回弹温度和固溶度均在此温度范围内

摘要

PURPOSE: To manufacture a grain oriented silicon steel sheet having thin thickness and high silicon by warm-rolling just below the recrystallizing temp. ;CONSTITUTION: A base stock containing 3.3-4.5% silicon content and MnS AlN and as inhibitor or a base stock containing 3.3-4.5% silicon content and MnS and AlN an inhibitor and further adding alloy element of tin, etc., in order to improve the inhibitor effect, is finished to 1.5-2.5mm sheet thickness by hot-rolling. To this working, the warm-rolling is applied in the range of 80-95% at below the recrystallizing temp. by 10-400C according to the silicon content and the rolling reduction ratio to sufficiently secure the neucleus generating site of zaffre orientation in the working condition. By this method, the vol. ratio of (110)[001] oriented crystal grain after primary crystallization is increased and to the high silicon content thin material being impossible to realize in the ordinary method, the development of the sharp zaffre aggregate structure after secondary recrystallizing annealing can be realized.;COPYRIGHT: (C)1994,JPO&Japio
机译:目的:通过在刚好低于再结晶温度的条件下进行热轧,来制造厚度薄,硅含量高的晶粒取向硅钢板。 ;组成:含有3.3-4.5%硅含量和MnS AlN作为抑制剂的基础油料或含有3.3-4.5%硅含量和MnS和AlN的基础油作为抑制剂,并进一步添加锡等合金元素,以便提高抑制效果,通过热轧加工成厚度为1.5-2.5mm的板材。为此,在低于重结晶温度的80-95%的范围内进行热轧。根据硅含量和压下率,将其在10-400℃下冷却,以在工作条件下充分确保Zaffre取向的核生成部位。通过这种方法,卷。初晶后的(110)[001]取向晶粒的比例增加,并且对于用常规方法不可能实现的高硅含量的薄材料来说,可以实现二次再结晶退火后尖锐的Zaffre聚集体结构的发展。版权所有:(C)1994,JPO&Japio

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