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首页> 外文期刊>Journal of Applied Physics >Magnetic properties and evidence of current-induced perpendicular field in epitaxial ferrimagnetic Mn_4N (002) film mixed with (111) phase
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Magnetic properties and evidence of current-induced perpendicular field in epitaxial ferrimagnetic Mn_4N (002) film mixed with (111) phase

机译:掺(111)相的外延亚铁磁性Mn_4N(002)薄膜的磁性和电流感应垂直场的证据

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摘要

The magnetic properties and anomalous Hall effect of the Mn_4N (002) film mixed with the (111) phase were investigated. The lessened magnetization of hysteresis loops at a low field and the peak at about 50 K of the temperature-dependent magnetization curves display that magnetocrystalline anisotropies play a significant role in the magnetic properties of the film. Moreover, the centres of the anomalous Hall loops are shifted to the left for positive currents and show the opposite shift for negative currents, which may indicate the presence of current-induced effective fields. It is proposed that the (111) phase in the film could not only supply the magnetization m derivation from the c aixs but also afford asymmetric interfaces to induce effective fields. The effective perpendicular field arises from the perpendicular components of the effective fields.
机译:研究了混合有(111)相的Mn_4N(002)薄膜的磁性和异常霍尔效应。磁滞回线在低磁场下的磁化强度减弱,并且与温度相关的磁化曲线的约50 K处的峰值表明,磁晶各向异性在薄膜的磁性能中起着重要作用。此外,对于正电流,霍尔霍尔异常环路的中心向左移动,而对于负电流,霍尔电流的中心向相反方向移动,这可能表明存在电流感应有效场。提出膜中的(111)相不仅可以提供来自磁道的磁化强度,还可以提供不对称的界面来感应有效场。有效垂直场由有效场的垂直分量产生。

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  • 来源
    《Journal of Applied Physics 》 |2017年第13期| 133905.1-133905.5| 共5页
  • 作者单位

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Physics, Sun Yat-Sen University, Guangzhou, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Physics, Sun Yat-Sen University, Guangzhou, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Physics, Sun Yat-Sen University, Guangzhou, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Physics, Sun Yat-Sen University, Guangzhou, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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