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Channel length scaling behavior in transistors based on individual versus dense arrays of carbon nanotubes

机译:基于碳纳米管的单个阵列与密集阵列的晶体管中的沟道长度缩放行为

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Recent advances in the solution-phase sorting and assembly of semiconducting single-walled carbon nanotubes (SWCNTs) have enabled significant gains in the performance of field-effect transistors (FETs) constructed from dense arrays of aligned SWCNTs. However, the channel length (L_(CH)) downscaling behaviors of these arrays, which contain some organizational disorder (i.e., rotational misalignment and non-uniform pitch), have not yet been studied in detail below L_(CH) of 100 nm. This study compares the behaviors of individualized SWCNTs with arrays of aligned, solution-cast SWCNTs in FETs with L_(CH) ranging from 30 to 240 nm. The on-state conductance of both individual and array SWCNTs rises with decreasing L_(CH). Nearly ballistic transport is observed for L_(CH) < 40 nm in both cases, reaching a conductance of 0.82 G_o per SWCNT in arrays, where G_o = 2e~2/h is the quantum conductance. In the off-state, the off-current and subthreshold swing of the individual SWCNTs remain nearly invariant with decreasing L_(CH) whereas array SWCNT FETs suffer from increasing off-state current and deteriorating subthreshold swing for L_(CH) below 100 nm. We analyze array disorder using atomic force microscopy, which shows that crossing SWCNTs that arise from misoriented alignment raise SWCNTs off of the substrate for large portions of the channel when L_(CH) is small. Electrostatics modeling analysis indicates that these raised SWCNTs are a likely contributor to the deteriorating off-current and subthreshold characteristics of arrays. These results demonstrate that improved inter-SWCNT pitch uniformity and alignment with minimal inter-SWCNT interactions will be necessary in order for solution processed SWCNT arrays to reach subthreshold performance on par with isolated SWCNTs. These results are also promising because they show that arrays of solution-processed SWCNTs can nearly reach ballistic conductance in the on-state despite imperfections in pitch and alignment.
机译:半导体单壁碳纳米管(SWCNT)的固溶相分选和组装方面的最新进展已使由对齐的SWCNT的密集阵列构成的场效应晶体管(FET)的性能得到了显着提高。但是,这些阵列的通道长度(L_(CH))缩小行为,包括一些组织混乱(即旋转未对准和不均匀的间距),尚未在100nm的L_(CH)以下进行详细研究。这项研究比较了L_(CH)范围为30至240 nm的场效应管中单个SWCNT的行为与对准的,溶液浇铸的SWCNT阵列。单个SWCNT和阵列SWCNT的导通状态电导都随着L_(CH)的减小而增加。在两种情况下,对于L_(CH)<40 nm都观察到近乎弹道传输,在阵列中每个SWCNT的电导达到0.82 G_o,其中G_o = 2e〜2 / h是量子电导。在关断状态下,各个SWCNT的关断电流和亚阈值摆幅几乎随L_(CH)的减小而保持不变,而阵列SWCNT FET的关断电流增加,并且L_(CH)低于100 nm时,亚阈值摆幅变差。我们使用原子力显微镜分析阵列失调,这表明当L_(CH)较小时,由于取向错误而产生的交叉SWCNT会使SWCNT从通道的大部分移出基板。静电学模型分析表明,这些升高的SWCNT可能是导致阵列的截止电流和亚阈值特性恶化的原因。这些结果表明,为了使溶液处理的SWCNT阵列达到与孤立的SWCNT相同的亚阈值性能,必须具有最大的SWCNT间相互作用以及改善的SWCNT间间距均匀性和对准性。这些结果也很有希望,因为它们表明,尽管间距和对准不完善,但溶液处理的SWCNT阵列仍可以在导通状态下几乎达到弹道电导。

著录项

  • 来源
    《Journal of Applied Physics 》 |2017年第12期| 124506.1-124506.7| 共7页
  • 作者单位

    Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, WI, United States;

    Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, WI, United States;

    Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, WI, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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