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SiN_x coatings deposited by reactive high power impulse magnetron sputtering: Process parameters influencing the residual coating stress

机译:反应性高功率脉冲磁控溅射沉积的SiN_x涂层:影响残余涂层应力的工艺参数

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摘要

The residual coating stress and its control is of key importance for the performance and reliability of silicon nitride (SiN_x) coatings for biomedical applications. This study explores the most important deposition process parameters to tailor the residual coating stress and hence improve the adhesion of SiN_x coatings deposited by reactive high power impulse magnetron sputtering (rHiPIMS). Reactive sputter deposition and plasma characterization were conducted in an industriai deposition chamber equipped with pure Si targets in N_2/Ar ambient. Reactive HiPIMS processes using N_2-to-Ar flow ratios of 0 and 0.28-0.3 were studied with time averaged positive ion mass spectrometry. The coatings were deposited to thicknesses of 2 µm on Si(001) and to 5 µm on polished CoCrMo disks. The residual stress of the X-ray amorphous coatings was determined from the curvature of the Si substrates as obtained by X-ray diffraction. The coatings were further characterized by X-ray photoelectron spectroscopy, scanning electron microscopy, and nanoinden-tation in order to study their elemental composition, morphology, and hardness, respectively. The adhesion of the 5 µm thick coatings deposited on CoCrMo disks was assessed using the Rockwell C test. The deposition of SiN_x coatings by rHiPIMS using N_2-to-Ar flow ratios of 0.28 yield dense and hard SiN_x coatings with Si/N ratios <1. The compressive residual stress of up to 2.1 GPa can be reduced to 0.2 GPa using a comparatively high deposition pressure of 600 mPa, substrate temperatures below 200 °C, low pulse energies of <2.5 Ws, and moderate negative bias voltages of up to 100 V. These process parameters resulted in excellent coating adhesion (ISO 0, HF1) and a low surface roughness of 14 nm for coatings deposited on CoCrMo,
机译:残留的涂层应力及其控制对于生物医学应用的氮化硅(SiN_x)涂层的性能和可靠性至关重要。这项研究探索了最重要的沉积工艺参数,以调整残留的涂层应力,从而提高通过反应性高功率脉冲磁控溅射(rHiPIMS)沉积的SiN_x涂层的附着力。在配备有纯Si靶的N_2 / Ar环境下的工业沉积室中进行反应性溅射沉积和等离子体表征。采用时间平均正离子质谱技术研究了N_2-Ar流量比为0和0.28-0.3的反应性HiPIMS工艺。涂层在Si(001)上的厚度为2 µm,在抛光的CoCrMo圆盘上的厚度为5 µm。 X射线无定形涂层的残余应力由通过X射线衍射获得的Si衬底的曲率确定。通过X射线光电子能谱,扫描电子显微镜和纳米标记进一步表征涂层,以便分别研究其元素组成,形态和硬度。使用Rockwell C测试评估沉积在CoCrMo圆盘上的5 µm厚涂层的附着力。通过rHiPIMS使用N_2-Ar流量比为0.28的SiN_x涂层沉积,可得到Si / N比<1的致密且坚硬的SiN_x涂层。使用相对较高的600 mPa沉积压力,低于200°C的基板温度,<2.5 Ws的低脉冲能量以及高达100 V的适度负偏压,可以将高达2.1 GPa的压缩残余应力降低至0.2 GPa。这些工艺参数可产生出色的涂层附着力(ISO 0,HF1),并且在CoCrMo上沉积的涂层的表面粗糙度低至14 nm,

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  • 来源
    《Journal of Applied Physics》 |2017年第17期|171904.1-171904.8|共8页
  • 作者单位

    Thin Film Physics Division, Department of Physics (ĪFM), Linköping University, SE-581 83 Linköping, Sweden;

    Thin Film Physics Division, Department of Physics (ĪFM), Linköping University, SE-581 83 Linköping, Sweden;

    Thin Film Physics Division, Department of Physics (ĪFM), Linköping University, SE-581 83 Linköping, Sweden;

    Thin Film Physics Division, Department of Physics (ĪFM), Linköping University, SE-581 83 Linköping, Sweden;

    IHI Ionbond AG, Industriestrasse 211, CH-4600 Olten, Switzerland;

    IHI Ionbond AG, Industriestrasse 211, CH-4600 Olten, Switzerland;

    IHI Ionbond AG, Industriestrasse 211, CH-4600 Olten, Switzerland;

    Thin Film Physics Division, Department of Physics (ĪFM), Linköping University, SE-581 83 Linköping, Sweden;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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