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机译:平面AIGaN / GaN肖特基二极管的电学性质:2DEG的作用和非理想性分析
IMM-CNR, Institute for Microelectronics and Microsystem, National Council of Research, Via Monteroni, 73100 Lecce, Italy;
NANOTEC-CNR, Nanotechnology Institute, National Council of Research, Via Monteroni, 73100 Lecce, Italy;
NANOTEC-CNR, Nanotechnology Institute, National Council of Research, Via Monteroni, 73100 Lecce, Italy;
NANOTEC-CNR, Nanotechnology Institute, National Council of Research, Via Monteroni, 73100 Lecce, Italy;
NANOTEC-CNR, Nanotechnology Institute, National Council of Research, Via Monteroni, 73100 Lecce, Italy;
IMM-CNR, Institute for Microelectronics and Microsystem, National Council of Research, Via Monteroni, 73100 Lecce, Italy;
机译:自由薄壁屏蔽AIGAN / GAN肖特基势垒二极管反向泄漏机构分析
机译:氟等离子体处理的AIGaN / GaN肖特基势垒二极管的反向漏电流分析
机译:未掺杂GaN肖特基势垒二极管的电性能和深层缺陷分析
机译:高温下AlGaN / GaN肖特基二极管的电学特性
机译:AIGaN / GaN基气体传感器中电极催化反应的电响应的表征和建模。
机译:超高压电子束蒸发制备的Pt / GaN肖特基二极管电学特性与温度的关系
机译:AlN和GaN脉冲比在热原子层沉积AlGaN上的影响AlGaN in AlGaN / GaN肖特基二极管电学性能