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首页> 外文期刊>Journal of Applied Physics >Electrical resistivity anomaly, valence shift of Pr ion, and magnetic behavior in epitaxial (Pr_(1-y)Y_y)_(1-x)Ca_xCoO_3 thin films under compressive strain
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Electrical resistivity anomaly, valence shift of Pr ion, and magnetic behavior in epitaxial (Pr_(1-y)Y_y)_(1-x)Ca_xCoO_3 thin films under compressive strain

机译:(Pr_(1-y)Y_y)_(1-x)Ca_xCoO_3薄膜在压缩应变下的电阻率异常,Pr离子的价态位移和磁行为

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摘要

We have fabricated (Pr_(1-y_Y_y)_(1-x)Ca_xCoO_3 (PYCCO) epitaxial films with various thicicnesses by pulsed laser deposition on the SrLaA1O_4 (SLAO) substrate that applied an in-plane compressive stress to the film, and investigated the temperature dependence of the electrical resistivity, p(T), of the films. An anomalous p(T) upturn with a broad hysteresis could be clearly observed only for the thinnest film (d = 50 nm), and the p(T) anomaly decreased by increasing film thickness, d. The temperature dependence of the X-ray absorption near-edge structure (XANES) spectra at Pr L_2-cdge was measured for the films, and the valence states of praseodymium (Pr) ion were determined using the analysis of the XANES spectra. As a result, the average valence of the Pr ion in the d = 50nm film slightly increases with decreasing temperature from the common value of 3.0+ around room temperature to 3.15+ at 8K. The valence shift of Pr is thus similar to what was observed on the PYCCO polycrystalline bulks with an abrupt metal-insulator transition, accompanied by a spin-state (SS) transition of Co ions. Furthermore, the low-temperature SQUID measurements evidenced a paramagnetic behavior down to the lowest temperature, which suggests that the dominant part of Co~(3+) ions in the film grown on the SLAO substrate tends to be in the low spin state characteristic for the insulating ground state. These results strongly suggest that the anomalous p(T) upturn in the thin films on the SrLaA1O_4 (SLAO) substrate is closely related to the SS transition of Co ions. On the other hand, PYCCO films grown on the LaA1O_3 (LAO) substrate that applied an in-plane tensile stress showed no valence shift of Pr ions and developed a long range ferromagnetic order, which points to a complete suppression of the low-temperature transition. The behaviors of the epitaxial films are discussed in terms of the in-plane stress exerted by different substrates and accumulated elastic energy.
机译:我们通过在SrLaA1O_4(SLAO)基板上施加了平面内压缩应力的脉冲激光沉积,制备了具有各种厚度的(Pr_(1-y_Y_y)_(1-x)Ca_xCoO_3(PYCCO)外延膜,并进行了研究薄膜的电阻率p(T)与温度的关系,只有在最薄的薄膜(d = 50 nm)上才能清楚地观察到异常的p(T)上翘并具有宽的滞后现象,而p(T) d。通过增加膜厚来减少反常现象d。测量膜在Pr L_2-cdge处的X射线吸收近边缘结构(XANES)光谱的温度依赖性,并使用来确定of(Pr)离子的价态结果,随着温度的降低,d = 50nm薄膜中Pr离子的平均价随温度的升高而略有增加,从室温附近的3.0+升高到8K时的3.15+。因此与在PYCCO多晶上观察到的相似具有突然的金属-绝缘体转变,并伴随着Co离子的自旋态(SS)转变。此外,低温SQUID测量结果表明,顺磁行为可降低到最低温度,这表明在SLAO衬底上生长的薄膜中Co〜(3+)离子的主要部分倾向于具有低自旋态特性。绝缘的基态。这些结果强烈表明,SrLaA1O_4(SLAO)衬底上的薄膜中异常的p(T)上翘与Co离子的SS跃迁密切相关。另一方面,在施加面内拉伸应力的LaA1O_3(LAO)衬底上生长的PYCCO膜没有显示Pr价键移动,并显示出远距离铁磁序,这表明完全抑制了低温转变。根据不同衬底施加的面内应力和累积的弹性能来讨论外延膜的行为。

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  • 来源
    《Journal of Applied Physics 》 |2017年第11期| 115104.1-115104.8| 共8页
  • 作者单位

    Faculty of Science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan;

    Faculty of Science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan;

    Faculty of Science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan;

    Faculty of Science and Engineering, Iwate University, 4-3-5 Ueda, Morioka 020-8551, Japan;

    Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan ,Graduate School of Environment and Information Sciences, Yokohama National University, 79-7 Tokiwadai, Yokohama 240-8501, Japan;

    Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan;

    Institute of Physics, ASCR, Cukrovarnicka 10,162 00 Prague 6, Czech Republic;

    Institute of Physics, ASCR, Cukrovarnicka 10,162 00 Prague 6, Czech Republic;

    Institute of Physics, ASCR, Cukrovarnicka 10,162 00 Prague 6, Czech Republic;

    Japan Synchrotron Radiation Research Institute, SPring-8,1-1-1 Kouto, Sayo 679-5198, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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