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机译:AIGaN / GaN异质结构场效应晶体管的金基和无金欧姆接触的形成机理
Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel;
Department of Material Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel;
Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel ,Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 OFS, United Kingdom;
Department of Material Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel;
Department of Material Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel;
Department of Material Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel;
Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel;
机译:侧欧姆接触处理对AIGaN / AIN / GaN异质结构场效应晶体管中极化库仑场散射的影响
机译:AIGaN / GaN异质结构上欧姆接触的形成机理:电学和微观结构表征
机译:欧姆接触GaN / AlGaN / GaN异质结构场效应晶体管的电子传输机理
机译:热退火对AIGaN / GaN异质结构中欧姆接触和器件隔离的影响
机译:AlGaN / GaN异质结构场效应晶体管的工艺开发和表征
机译:表面钝化对超薄AlN / GaN异质结构场效应晶体管中AlN势垒应力和散射机理的影响
机译:AIGAN / GaN异质结构场效应晶体管中的接触电阻的降低