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A Resonant Cavity Study of Semiconductors

机译:半导体谐振腔研究

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摘要

A solution of Maxwell's equations is obtained in a resonant cavity with a center post of arbitrary electrical properties. The solution gives the dielectric coefficient and the conductivity of the center post in terms of the natural frequency and Q of the cavity. The theory is of particular use in the study of semiconductors where perturbation theories are of little value. It is shown that a transition from a cylindrical mode to a coaxial mode occurs as the conductivity of the center post is varied. This transition occurs for a relatively small change in conductivity. The present results are compared with those of perturbation theory, and it is shown that the latter are valid over a greater range than the conditions imposed in their derivation indicate.
机译:在具有任意电特性中心柱的谐振腔中获得麦克斯韦方程组的解。该解以空腔的固有频率和Q值给出了中心柱的介电系数和电导率。该理论在微扰理论价值不大的半导体研究中特别有用。示出了随着中心柱的电导率变化,发生从圆柱形模式到同轴模式的转变。发生这种转变是因为电导率的变化相对较小。将目前的结果与摄动理论的结果进行比较,结果表明,后者在比推导理论所施加的条件更大的范围内有效。

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  • 来源
    《Journal of Applied Physics》 |1954年第3期|共6页
  • 作者

    Hsieh Hsiamp;

  • 作者单位

    Solid‐State and Molecular Theory Group, and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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