Nonlinear behavior of microwave semiconductor materials measured under a strong electromagnetic environment using a compressed rectangular resonant cavity

摘要

The dielectric property of microwave semiconductor materials is investigated under a strong electromagnetic field environment through a compressed rectangular cavity around the frequency of 2.45G. It is demonstrated that the dielectric property of indium phosphate (InP), a kind of microwave semiconductor material, changes when a larger power is injected into the designed cavity. The injected power changes the strength of the electric field in the cavity. Measurement results show that InP has an obvious nonlinear dielectric property when a strong electromagnetic field acts on the material. According to effective experimental method and theoretical analysis, we conclude that the nonlinear behavior is not caused by microwave heating, but caused by the material's inherent nonlinearity.