A Computational Model of Pulsed-Laser Irradiation of Hydrogenated Amorphous Silicon with Phase Changes

摘要

The phase transitions in thin layers of hydrogenated amorphous silicon caused by XeCl laser irradiation are studied. A mathematical model of nonequilibrium phase changes including the crystallization in the solid state is formulated as a four-phase problem with three moving boundaries. The numerical solution is performed using the Landau transformations, Galerkin finite element method and succesive approximation approach. The computational simulation is in a good agreement with the experimental observations as well as with the data previously published by other authors.