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首页> 外文期刊>Journal of Applied Electrochemistry >Copper plating on titanium alloy 6-2-4-2 using an in situ high voltage pulse followed by plate-up
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Copper plating on titanium alloy 6-2-4-2 using an in situ high voltage pulse followed by plate-up

机译:使用原位高压脉冲在钛合金6-2-4-2上进行镀铜,然后进行镀覆

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We have used an in situ technique that removes the oxide from the surface of the alloy titanium 6-2-4-2, followed by copper electroplating of the surface. The oxide removal is accomplished by means of a short voltage pulse from a discharging capacitor between the cathode (titanium) and anode while submerged in the plating solution. Within seconds thereafter, the electrodes are switched to a separate power supply for electroplating copper onto the titanium. From the experimental data, we believe that the oxide is removed by means of dielectric breakdown mechanisms giving rise to a statistical probability that all of the surface oxide is removed. When this occurs, we obtain adherent depositions based on standard tape testing of the deposit. We determine a set of voltage and energy density conditions which are most likely to result in good adhesion. Scanning electron micrographs of adherent copper deposits are presented.
机译:我们使用了一种原位技术,该技术可以从6-2-4-2钛合金的表面去除氧化物,然后对表面进行铜电镀。当浸没在电镀液中时,借助于来自阴极(钛)和阳极之间的放电电容器的短电压脉冲来完成氧化物的去除。此后几秒钟内,将电极切换到单独的电源,以将铜电镀到钛上。从实验数据来看,我们相信通过介电击穿机制可以去除氧化物,从而产生了统计的可能性,即所有表面氧化物都被去除了。发生这种情况时,我们会根据沉积物的标准胶带测试获得附着的沉积物。我们确定一组最有可能导致良好附着力的电压和能量密度条件。呈现了粘附的铜沉积物的扫描电子显微照片。

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