IR laser-induced process for chemical vapor deposition of polyselenocarbosilane films

摘要

TEA CO_2 laser irradiation into gaseous mixtures of 1,3-disilacyclobutane (DSCB) and dimethyl selenide (DMS) results in infrared multiple photon-induced, non-interacting homogeneous decompositions of both educts, one yielding silene (H_2Si = CH_2) and the other elemental selenium as major products. The reaction between polymerizing silene and agglomerizing Se leads to chemical vapor deposition of novel polyselenocarbosilane films which are unstable in atmosphere. The laser induced co-decomposition represents a new process in allowing (ⅰ) reaction between thermally generated transient and element and (ⅱ) chemical vapor deposition of the product of this reaction.