Organic n-Channel Field-Effect Transistors Based on Arylenediimide-Thiophene Derivatives

摘要

Abstract: The synthesis, structural, electrochemical, and thin film electrical and electronic structuralnproperties of a series of arylene diimide-oligothiophene n-type semiconductors are reported. This family ofncompounds allows analysis of the effects on thin film transistor performance of the following: (i)noligothiophene backbone catenation; (ii) naphthalenediimide vs perylenediimide core interchange; (iii)nphenylene group introduction in the oligothiophene backbone. Electrochemical experiments indicate similarnredox energetics for all members of this series, while thin film transistor measurements reveal markedlyndifferent charge transport performances. The highest electron mobility of 0.35 cm2 V 1 s 1 is recorded fornfilms of benzo[lmn]thieno[3′,4′:4,5]imidazo[2,1-b][3,8]phenanthroline-1,3,6(2H)-trione, 2-octyl (NDI-1T).nSolution-processed field effect transistors were also fabricated and surprisingly exhibit electrical perfor-nmances surpassing that of the vapor-deposited films in the case of isoquino[6′,5′,4′:10,5,6]anthra[2,1,9-ndef]thieno[3′,4′:4,5]imidazo[2,1-a]isoquinoline-1,3,8(2H)-trione, 2-(1-heptyloctyl)-10,12-di-2-thienyl (PDI-3T).