Fabrication and Characterization of Sol-Gel Derived (100)-Textured (Pb_(0.97)La_(0.02))(Zr_(0.95)Ti_(0.05))O_3 Thin Films

摘要

A typical kind of antiferroelectric (AFE) thin films with the composition of (Pb_(0.97)La_(0.02))(Zr_(0.95)Ti_(0.05))O_3 (PLZT) were successfully fabricated on the platinum-buffered silicon substrates through the modified sol-gel method. X-ray diffractometer results indicated that PLZT films possessed a pure perovskite structure with a strong (100) orientation. The dielectric permittivity-field and polarization-field measurements demonstrated the AFE nature of the PLZT thin films. The level of electric-field-induced strain was measured to be about 0.65% using an scanning probe microscope.