Energy-storage performance and electrocaloric effect in (100)-oriented Pb_(0.97)La_(0.02)(Zr_(0.95)Ti_(0.05))O_3 antiferroelectric thick films

摘要

(100)-oriented Pb_(0.97)La_(0.02)(Zr_(0.95)Ti_(0.05))O_3 (PLZT) antiferroelectric films with a thickness of about 1.7 μm were deposited on Pt-buffered silicon substrates via a sol-gel process. The room-temperature capacitance density of the films was above 195 nF/cm~2 over the frequency range from 1 kHz to 1 MHz. The recoverable energy density was enlarged with increasing measurement field, and a maximum value of 12.4 J/cm~3 at 1120 kV/cm was obtained at room temperature. From the temperature-dependent electric-field-induced polarization hysteresis loops, a maximum reversible adiabatic temperature change, △T=8.5℃, was obtained near the phase-transition temperature.