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Microwave Dielectric Properties of Li_2TiO_3 Ceramics Doped with ZnO-B_2O_3 Frit

机译:ZnO-B_2O_3掺杂的Li_2TiO_3陶瓷的微波介电性能

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摘要

A type of new low sintering temperature ceramic, Li_2TiO_3 ceramic, has been found. Although it is difficult for the Li_2TiO_3 compound to be sintered compactly at temperatures above 1000℃ for the volatilization of Li_2O, dense Li_2TiO_3 ceramics were obtained by conventional solid-state reaction method at the sintering temperature of 900℃ with the addition of ZnO-B_2O_3 frit. The sintering behavior and microwave dielectric properties of Li_2TiO_3 ceramics with less ZnO-B_2O_3 frit (≤3.0 wt%) doping were investigated. The addition of ZnO-B_2O_3 frit can lower the sintering temperature of the Li_2TiO_3 ceramics, but it does not apparently degrade the microwave dielectric properties of the Li_2TiO_3 ceramics. Typically, the good microwave dielectric properties of ε~r = 23.06, Q×f= 32 275 GHz, τ_f = 35.79 ppm/℃ were obtained for 2.5 wt% ZnO-B_2O_3 frit-doped Li_2TiO_3 ceramics sintered at 900℃ for 2 h. The porosity was 0.08%. The Li_2TiO_3 ceramic system may be a promising candidate for low-temperature cofired ceramics applications.
机译:已经发现一种新型的低烧结温度陶瓷Li_2TiO_3陶瓷。尽管很难在高于1000℃的温度下紧密烧结Li_2TiO_3化合物以使Li_2O挥发,但通过常规固相反应方法在900℃的烧结温度下添加ZnO-B_2O_3熔块可以得到致密的Li_2TiO_3陶瓷。 。研究了掺杂较少ZnO-B_2O_3熔块(≤3.0wt%)的Li_2TiO_3陶瓷的烧结行为和微波介电性能。 ZnO-B_2O_3熔块的添加可以降低Li_2TiO_3陶瓷的烧结温度,但不会明显降低Li_2TiO_3陶瓷的微波介电性能。典型地,对于在900℃下烧结2h的2.5wt%的ZnO-B_2O_3熔块掺杂的Li_2TiO_3陶瓷,获得了良好的微波介电特性,ε_r= 23.06,Q×f = 32275GHz,τ_f= 35.79ppm /℃。孔隙率为0.08%。 Li_2TiO_3陶瓷体系可能是低温共烧陶瓷应用的有前途的候选者。

著录项

  • 来源
    《Journal of the American Ceramic Society》 |2009年第4期|952-954|共3页
  • 作者

    Jun Liang; Wen-Zhong Lu;

  • 作者单位

    Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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  • 入库时间 2022-08-17 13:41:56

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