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Preparation and Characterization of a New Microwave Dielectric Ceramic Ba_4ZnTi_(11)O_(27)

机译:新型微波介电陶瓷Ba_4ZnTi_(11)O_(27)的制备与表征

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摘要

Preparation, sintering behavior, and microwave dielectric properties of Ba_4ZnTi_(11)O_(27) ceramic were investigated. The single-phase Ba_4ZnTi_(11)O_(27) ceramic can be well densified in the temperature range from 1175° to 1250℃ with a relative density about 97%. X-ray diffraction data show that Ba_4ZnTi_(11)O_(27) has a monoclinic structure (C2/m), with lattice parameters of a = 19.81549 A, b = 11.43072 A, and c = 9.91129 A when the sintering temperature is 1200℃. Pure monoclinic Ba_4ZnTi_(11)O_(27) ceramic sintered at 1200℃ for 2 h exhibits good microwave dielectric properties with a permittivity about 36.8, Q ×f value about 16460 GHz, and temperature coefficient of resonant frequency about 17.2 ppm/℃. The addition of BaCu(B_2O_5) can effectively lower the sintering temperature from 1200° to 925℃ and does not induce degradation of the microwave dielectric properties. Obviously, the Ba_4ZnTi_(11)O_(27) ceramic can be applied to microwave low-temperature cofired ceramics devices.
机译:研究了Ba_4ZnTi_(11)O_(27)陶瓷的制备,烧结性能和微波介电性能。单相Ba_4ZnTi_(11)O_(27)陶瓷在1175°至1250℃的温度范围内可以很好地致密化,相对密度约为97%。 X射线衍射数据表明Ba_4ZnTi_(11)O_(27)具有单斜晶结构(C2 / m),烧结温度为1200时晶格参数为a = 19.81549 A,b = 11.43072 A和c = 9.91129 A ℃。 1200℃烧结2 h的纯单斜晶Ba_4ZnTi_(11)O_(27)陶瓷具有良好的微波介电性能,介电常数约为36.8,Q×f值约为16460 GHz,谐振频率温度系数约为17.2 ppm /℃。 BaCu(B_2O_5)的加入可以有效地将烧结温度从1200°降低到925℃,并且不会引起微波介电性能的下降。显然,Ba_4ZnTi_(11)O_(27)陶瓷可以应用于微波低温共烧陶瓷器件。

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  • 来源
    《Journal of the American Ceramic Society》 |2010年第6期|P.1537-1539|共3页
  • 作者单位

    Key Laboratory of Nonferrous Materials and New Processing Technology, Ministry of Education, Guilin University of Technology, Guilin 541004, China;

    rnKey Laboratory of Nonferrous Materials and New Processing Technology, Ministry of Education, Guilin University of Technology, Guilin 541004, China;

    rnKey Laboratory of Nonferrous Materials and New Processing Technology, Ministry of Education, Guilin University of Technology, Guilin 541004, China;

    rnKey Laboratory of Nonferrous Materials and New Processing Technology, Ministry of Education, Guilin University of Technology, Guilin 541004, China;

    rnElectronic Materials Research Laboratory, Key Laboratory of the Ministry of the Education, Xi'an Jiaotong University, Xi'an 710049, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-17 13:40:27

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