Reply to the 'Comment on 'Piezoresistive Effect in SiOC Ceramics for Integrated Pressure Sensors'

摘要

As part of the authors of the original paper, we would like to take the opportunity to reply to the Comment. The basic argument in the Comment is that the experimental method of measuring the piezoresistive behavior of the SiOC specimen, as used in our study is flawed because we applied a 2-point measurement system instead of a 4-point technique to determine the electrical resistivity of our samples. Chung clearly describes why the latter method is considered to be superior to the analysis we used. Generally, we agree to this judgement and wish to thank the author of the Comment for the helpful statements.