Strengthening of Ti_3(Si, AI)C_2 by Doping with Tungsten

摘要

Improving the high-temperature strength and stiffness of Ti_3SiC_2 is the task of many investigations. However, methods for high-temperature strengthening have not been established although various ways are applicable to enhance the room-temperature mechanical 'properties of Ti_3SiC_2. In this work, we report that significant strengthening was realized at both room and high temperatures by incorporating a small amount of W into Ti_3(Si, A1)C_2. The onsite temperature for the rapid degradation of stiffness and strength moved more than 150℃ upward to over 1200℃. The flexural strength of 5 at.% W-doped Ti_3(Si, A1)C_2 is 632.9 MPa at RT and 285 MPa at 1200℃, being 176% and 170% of those for baseline material, respectively.