Preparation and Growth of Predominantly (100)-Oriented Ca_(0.4)Sr_(0.6)Bi_4Ti_4O_(15) Thin Film by Rapid Thermal Annealing

摘要

Predominantly (100)-oriented Ca_(0.4)Sr_(0.6)Bi_4Ti_4O_(15) thin films were fabricated by the sequential layer annealing procedure using a metal-organic decomposition method with the annealing temperatures ranging from 650℃ to 850℃. The relative intensity of (200) peak [I(200)/I(119)] can even reach up to 5.974 if the film is sequentially deposited on SiO_2/Si substrates and annealed at 800℃ for 11 times. The epitaxial growth mode of the thin film was discussed based on the structure evolution with annealing temperature and the number of layers. The maximum remnant polarization of 19.4 μC/cm~2 and subsequent coercive field of 153 kV/cm was found in the film with the highest I(200)/I(119).