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A New Temperature Stable Microwave Dielectric Material Mg_(0.5)Zn_(0.5)TiNb_2O_8

机译:一种新型的温度稳定微波介电材料Mg_(0.5)Zn_(0.5)TiNb_2O_8

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摘要

A new temperature stable, low-loss, low sintering temperature microwave dielectric material Mg_(0.5)Zn_(0.5)TiNb_2O_8 was investigated for the first time. Single phase Mg_(0.5)Zn_(0.5)TiNb_2O_8 was obtained, and it showed Columbite structure which was tri-ixio-lite structure. The variation trend of dielectric constant was in accordance with variation trend of relative density. When the sintering temperature was lower than 1120℃, the Qf value increased with the increasing of relative density. When the sintering temperature was higher than 1120℃, the Qf value decreased with the increasing of the unit cell volume. With the decrease of bond strength, the τ_f increased. The typical values of e = 30.74, Qf= 66 900 GHz, τ_f = -4.01 × 10~(-6)/℃ were obtained for Mg_(0.5)Zn_(0.5)TiNb_2O_8 sintered at 1120℃ for 6 h.
机译:首次研究了一种新型的温度稳定,低损耗,低烧结温度的微波介电材料Mg_(0.5)Zn_(0.5)TiNb_2O_8。得到单相Mg_(0.5)Zn_(0.5)TiNb_2O_8,并显示为三线晶状的哥伦比结构。介电常数的变化趋势与相对密度的变化趋势一致。当烧结温度低于1120℃时,Qf值随相对密度的增加而增加。当烧结温度高于1120℃时,Qf值随晶胞体积的增加而降低。随着粘结强度的降低,τ_f增加。 Mg_(0.5)Zn_(0.5)TiNb_2O_8在1120℃烧结6 h得到的e = 30.74,Qf = 66 900 GHz,τ_f= -4.01×10〜(-6)/℃。

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  • 来源
    《Journal of the American Ceramic Society》 |2012年第5期|p.1501-1503|共3页
  • 作者单位

    School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;

    School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;

    School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;

    School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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