机译:小直流偏置场下晶粒和晶界电阻对KNbO_3介电性能的影响
Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;
Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;
Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;
Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;
Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;
Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;
机译:Ni2 +掺杂的CaCu3Ti4O12中显着增强的介电响应和非线性电气行为的起源:DC偏置对晶界和相关巨电介电性能的电学性能的影响
机译:直流偏置场对高k Y5V(Ba,La)(Ti,Ce)O_3陶瓷介电性能的影响
机译:直流偏置对铁取代的CaCu_3Ti_40_(12)陶瓷介电弛豫的影响:晶界和表面效应
机译:直流偏压对溅射钽氧化物薄膜的介电性能的影响
机译:饱和烃等离子体对P型多晶硅中晶界电子性质的影响。
机译:在存在晶界元素的情况下均质化热处理对718Plus合金铸造结构和拉伸性能的影响数据
机译:大偏压对具有超薄栅极电介质P沟道金属氧化物半导体场效应晶体管负偏置温度不稳定性的影响
机译:谷物边界工程在提高推进系统金属合金高周疲劳性能和提高可靠性中的作用研究