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Influence of Grain and Grain-Boundary Resistances on Dielectric Properties of KNbO_3 Under Small DC Bias Field

机译:小直流偏置场下晶粒和晶界电阻对KNbO_3介电性能的影响

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摘要

Lead-free piezoelectric potassium niobate (KNbO_3) system was synthesized by conventional solid-state ceramic route. Rietveld analysis of X-ray diffraction data of this system revealed that the sample crystallized in pure orthorhombic perovskite phase at room temperature. SEM micrograph of this system depicted presence of grains having diffuse brick structure with an average grain size of 500 nm. Dielectric properties of KNbO_3 ceramic were investigated under different DC bias voltage in a broad frequency (from 20 Hz to 1 MHz) and temperature (from 200℃ to 500℃) ranges in its three crystalline phases. The dielectric constant was found to increase with increasing bias field in all three phases. The loss tangent of this system was found to increase first, and then it becomes constant with increasing bias field. These properties have been explained in terms of variation of grain and grain-boundary resistances with bias field.
机译:采用常规的固态陶瓷路线合成了无铅压电铌酸钾(KNbO_3)体系。该系统的X射线衍射数据的Rietveld分析表明,样品在室温下以纯正交晶钙钛矿相结晶。该系统的SEM显微照片描绘了具有弥散砖结构的晶粒的存在,平均晶粒尺寸为500nm。研究了KNbO_3陶瓷在不同的直流偏置电压下在其三个晶相的宽频率(从20 Hz到1 MHz)和温度(从200℃到500℃)范围内的介电性能。发现在所有三相中,介电常数都随着偏置场的增加而增加。发现该系统的损耗角正切首先增加,然后随着偏置场的增加而变得恒定。这些特性已根据晶粒和晶界电阻随偏置场的变化进行了解释。

著录项

  • 来源
    《Journal of the American Ceramic Society》 |2013年第10期|3127-3132|共6页
  • 作者单位

    Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;

    Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;

    Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;

    Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;

    Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;

    Department of Applied Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-17 13:38:05

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