首页> 外文期刊>Journal of the American Ceramic Society >Phase Diagram and Properties of High T_C/T_(R-T) Pb(In_(1/2)Nb(1/2)) O_3-Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3 Ferroelectric Ceramics
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Phase Diagram and Properties of High T_C/T_(R-T) Pb(In_(1/2)Nb(1/2)) O_3-Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3 Ferroelectric Ceramics

机译:高T_C / T_(R-T)Pb(In_(1/2)Nb(1/2))O_3-Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3铁电陶瓷的相图和性能

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摘要

A ternary ferroelectric ceramic system, (1-x-y)Pb(In_(1/2)Nb_(1/2) O_3-xPb(Zn_(1/3)Nb_(2/3)O_3-yPbTiO_3 (PIN-PZN-PT, x = 0.21, 0.27, 0.36, 0.42), was prepared using a two-step precursor method. The phase structure, dielectric, piezoelectric, and ferroelectric properties of the ternary ceramics were systematically investigated. A morphotropic phase boundary (MPB) was identified by X-ray diffraction. The optimum piezoelectric and electromechanical properties were achieved for a composition close to MPB (0.5PIN-0.21PZN-0.29PT), where the piezoelectric coefficient d_(33), planar electromechanical coupling factor k_p, and remnant polarization P_r are 660 pC/N,72%, and 45 μC/ cm~2, respectively. The Curie temperature T_c and rhombohedral to tetragonal phase transition temperature 7_(r-T) were also derived by temperature dependence of dielectric measurements. The strongly "bended" MPB in the PIN-PT system was found to be "flattened" after addition of PZN in the PIN-PT-PZN system. The results demonstrate a possibility of growing ferroelectric single crystals with high electromechanical properties and expanded range of application temperature.
机译:三元铁电陶瓷系统(1-xy)Pb(In_(1/2)Nb_(1/2)O_3-xPb(Zn_(1/3)Nb_(2/3)O_3-yPbTiO_3(PIN-PZN-PT (x = 0.21、0.27、0.36、0.42),采用两步前驱法制备,对三元陶瓷的相结构,介电,压电和铁电性能进行了系统研究,确定了同相相界(MPB)。通过X射线衍射,获得了接近MPB(0.5PIN-0.21PZN-0.29PT)的最佳压电和机电性能,其中压电系数d_(33),平面机电耦合系数k_p和残余极化P_r分别为660 pC / N,72%和45μC/ cm〜2。居里温度T_c和菱形至四方相变温度7_(rT)也由电介质测量的温度依赖性得出。在PIN-PT-PZN系统中添加PZN后,发现PIN-PT系统中的“扁平化”。证明了生长具有高机电性能和扩大应用温度范围的铁电单晶的可能性。

著录项

  • 来源
    《Journal of the American Ceramic Society》 |2013年第5期|1546-1553|共8页
  • 作者单位

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou 350002, Fujian, China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou 350002, Fujian, China;

    Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou 350002, Fujian, China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou 350002, Fujian, China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou 350002, Fujian, China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou 350002, Fujian, China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou 350002, Fujian, China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou 350002, Fujian, China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou 350002, Fujian, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-17 13:37:57

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