The Effect of PbS on Crystallization Behavior of GeS_2-Ga_2S_3-Based Chalcogenide Glasses

摘要

Glass-ceramics of PbS-doped 80GeS_2 20Ga_2S_3 were fabricated by heat treatments of base glasses at T_g+30℃ for different durations. They exhibited improved mechanical properties such as hardness and resistance to crack propagation, and meanwhile retained their excellent infrared transmission. X-ray diffraction and Raman results indicated that Ga_2S_3 and GeS_2 crystals were precipitated inside glassy matrix. The crystallization kinetics of base glass was investigated using differential scanning calorimetry under nonisothermal conditions. Compared with the previous work concerning on 80GeS_2·20Ga_2S_3 glass, there exists some different features of crystallization behavior. Such variation is discussed and correlated with the network structure and crystallization kinetics in this glass system.