首页> 外国专利> METHOD OF MANUFACTURING A LARGE-GRAIN CRYSTALLIZED METAL CHALCOGENIDE FILM, AND A CRYSTALLIZED METAL CHALCOGENIDE FILM PREPARED USING THE METHOD

METHOD OF MANUFACTURING A LARGE-GRAIN CRYSTALLIZED METAL CHALCOGENIDE FILM, AND A CRYSTALLIZED METAL CHALCOGENIDE FILM PREPARED USING THE METHOD

机译:制造大晶粒结晶金属硫属化物膜的方法,以及使用该方法制备的结晶金属硫属化物膜

摘要

The present invention relates to a method for preparing an aqueous or hydro-alcoholic colloidal solution of metal chalcogenide amorphous nanoparticles notably of the Cu2ZnSnS4 (CZTS) type and to the obtained colloidal solution.;The present invention also relates to a method for manufacturing a film of large-grain crystallized semi-conducting metal chalcogenide film notably of CZTS obtained from an aqueous or hydro-alcoholic colloidal solution according to the invention, said film being useful as an absorption layer deposited on a substrate applied in a solid photovoltaic device.
机译:本发明涉及一种特别是Cu 2 ZnSnS 4 (CZTS)型金属硫属元素化物无定形纳米颗粒的水性或水-醇胶体溶液的制备方法。本发明还涉及一种制备大晶粒结晶的半导体金属硫属化物膜的方法,该膜特别是由根据本发明的水性或水-醇胶体溶液获得的CZTS。作为沉积在吸收层上的吸收层,该吸收层沉积在固体光电器件中。

著录项

  • 公开/公告号US2020215509A1

    专利类型

  • 公开/公告日2020-07-09

    原文格式PDF

  • 申请/专利权人 IMRA EUROPE SAS;

    申请/专利号US202016820984

  • 申请日2020-03-17

  • 分类号B01J13;B82Y30;B82Y40;B01F3/12;H01L31/0224;H01L31/0296;H01L31/032;H01L31/0368;H01L31/18;

  • 国家 US

  • 入库时间 2022-08-21 11:20:51

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