Dual-Function Electron-Conductive, Hole-Blocking Titanium Nitride Contacts for Efficient Silicon Solar Cells

摘要

High-performance passivating contact is a prerequisite for high-efficiency crystalline silicon (c-Si) solar cells. In this work, an electron-conductive, hole-blocking contact based on titanium nitride (TiN) deposited by reactive magnetron sputtering is presented. Quasi-metallic TiN combined with an ultrathin SiO_2 passivation layer (SiO_2/TiN) is demonstrated to be an effective electron-selective contact on c-Si, featuring a low-contact resistivity of 16.4 mΩ.cm~2 and a tolerable recombination current parameter of 500 fA/cm~2. By implementing the dual-function SiO_2/TiN contact, which acts simultaneously as a surface passivating layer and metal electrode, an efficiency of 20% is achieved by an n-type c-Si solar cell with a simple structure. This work not only demonstrates a way to develop efficient n-type c-Si solar cells with dual-function metal nitride contacts at a low cost but also expands the pool of available carrier transport materials, from metal oxides to metal nitrides, for photovoltaic devices.