Analysis of dependence of dV_(CE)/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor

摘要

The double-gate drive is a remarkable gate control technique for dramatically reducing turn-off loss in Si-insulated gate bipolar transistors (IGBT) by increasing dV(CE)/dt. However, no detailed analysis of the difference of turn-off mechanism according to the difference in dV(CE)/dt between double-gate drive and conventional gate drive has been reported. The double-gate (DG) drive allows the dV(CE)/dt of IGBTs to increase beyond the maximum dV(CE)/dt of 7000 V mu s(-1) in conventional gate drives. Furthermore, the influence of relations between gate-drive timings and dV(CE)/dt on turn-off operations were confirmed in the case of three different DG IGBT structures. (c) 2020 The Japan Society of Applied Physics