Vacancy- and interstitial-mediated self-diffusion coefficients determined from the analysis of observed self-diffusion coefficients in silicon crystals

摘要

We clarify the mechanisms of self-diffusion mediated by both vacancies and interstitials in silicon crystals. Sudkamp and Bracht published carefully measured self-diffusion data for silicon and determined the vacancy-mediated diffusion coefficients from the difference between their new data and previous data of metal diffusion under consideration of a correlation factor. Instead, we analyzed their data using the vacancy properties: the formation energy was obtained from quenching experiments of silicon crystals in a hydrogen atmosphere, and the migration energy determined from low-temperature electron irradiation. The self-diffusion coefficient is given by the sum of the diffusion coefficients of the vacancy mechanism, 0.90 exp (-4.30 eV/k(B)T), and the interstitial mechanism, 6.9 x 10(2) exp (-4.8 eV/k(B)T) cm(2) s(-1).