Round-robin test of the photoluminescence method after electron irradiation for quantifying low-level carbon in silicon

摘要

Round-robin test of the photoluminescence method after electron irradiation was performed for quantifying low-level C impurities in the magnetic-field-applied Czochralski Si crystals with a resistivity of about 50 k Omega.cm (n-type) and with resistivity higher than 5 k Omega.cm (p-type). Their C concentrations were determined as ranging from 1.4 x 10(14) to 3.6 x 10(15) cm(-3) by secondary ion mass spectroscopy. A universal correlation holds between the C concentration and the intensity ratio of the G-line to the band-edge emission normalized by the ratio of the reference sample, which can be used as a calibration curve for the C quantification. The measurement error and repeatability of the G-line intensity ratio are less than +/- 20% and less than +/- 10% deviation, respectively, and the overall error in the C concentration estimated from the calibration curve is less than +/- 30%. This demonstrates the effectiveness of the present method as a novel standard technique for quantifying low-level C impurities. (C) 2020 The Japan Society of Applied Physics