Estimation of hole spin g-factors in p-channel silicon single and double quantum dots towards spin manipulation

摘要

In this work, we study spin-related hole transport in physically-defined p-channel silicon single quantum dot (SQD) and double quantum dot (DQD) which are based on metal-oxide-semiconductors fabricated on (110) silicon-on-insulator substrates. We estimate a Lande g-factor of SQD to be similar to 3.0 from its bias spectroscopy of charge transition under various magnetic field. The g-factor of the DQD system is obtained as similar to 2.0 based on analyzing the magnetic field dependence of the Pauli spin blockade (PSB) region. With the characteristic of magnetic-field-induced leakage current in PSB, we identify spin relaxation mechanisms with the presence of strong spin-orbit coupling (SOC). The strong SOC indicates the possibility of a local spin manipulation method with only an electric field which is considered to be promising to process quantum computation in the future. (C) 2020 The Japan Society of Applied Physics