Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20nm

摘要

Magnetic tunnel junctions with a perpendicular easy axis (p-MTJs) have been intensively developed since CoFeB/MgO p-MTJs were shown to have high potential in satisfying major requirements for use in practical applications. CoFeB/MgO-based p-MTJs are becoming the de facto standard in spin-transfer-torque magnetoresistive random access memory and spintronics-based very large scale integrated circuits. In this paper, we review, based on our efforts, the properties of standard CoFeB/MgO based p-MTJs as well as p-MTJs using high-anisotropy Co-based multilayers combined with the CoFeB/MgO system at a junction diameter of less than 20 nm. (C) 2017 The Japan Society of Applied Physics