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机译:Cu / SiO_2杂化键合中具有1.8μm铜焊盘和3.6μm间距的Cu凹陷的Cu CMP工艺开发和表征
Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China|Shanghai IC R&D Ctr, Shanghai 201210, Peoples R China;
Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China;
Shanghai IC R&D Ctr, Shanghai 201210, Peoples R China;
Shanghai IC R&D Ctr, Shanghai 201210, Peoples R China;
Shanghai IC R&D Ctr, Shanghai 201210, Peoples R China;
Shanghai IC R&D Ctr, Shanghai 201210, Peoples R China;
Shanghai IC R&D Ctr, Shanghai 201210, Peoples R China;
Shanghai IC R&D Ctr, Shanghai 201210, Peoples R China;
机译:Cu / SiO_2混合粘合中的1.8μmCu垫Cu CMP工艺开发和Cu凹陷和3.6μm间距的表征
机译:了解Cu CMP中线和焊盘之间的差异
机译:Cu CMP过程中和清洗后的Cu上Cu-BTA有机配合物的表征
机译:焊盘硅集成电路下用于细间距40nm电路的铜线键合:全面,强大的铜线键合工艺的发展
机译:稀土金属添加对Al-Cu和Al-Si-Cu基合金性能的影响=加入稀有金属对Al-Cu和Al-Si-Cu合金性能的影响
机译:(111)定向和纳米孪晶铜的结合界面微观结构与铜-铜接头的剪切强度之间的相关性
机译:金属合金Cu表面钝化导致用于3D IC和异构整合应用的高质量细间距凸块Cu-Cu键合