Simulation studies on guard ring effects on edge breakdown suppression of InGaAs/InP avalanche photodiodes

摘要

The breakdown characteristics of InGaAs/InP avalanche photodiodes (APDs) are investigated theoretically as a function of structural parameters of a guard ring. The difference between electric fields in the center and edge regions greatly increases with increasing distance (d) between the p(+)-InP contact and the floating guard ring. As a result, the edge breakdown can be reduced using a floating guard ring with d = 0.3-0.8 mu m. However, we observe that the reduction effect of the breakdown voltage caused by the adjustment of the doping concentration or junction position is not large, compared with that by the distance d. (C) 2018 The Japan Society of Applied Physics