Impact of Image and Exchange-Correlation Effects on Ballistic Electron Transport in Nanoscale Double-Gate Metal-Oxide-Semiconductor Transistors

摘要

The influence of image and many-body exchange-correlation effects on electron transport has been studied for nanoscale double-gate metal-oxide-semiconductor field-effect transistors (DG MOSFETs), using the non equilibrium Green function (NEGF) method. It has been found that the inclusion of image and exchange-correlation effects increases the calculated value of the drain current. This is because the potential energy is reduced except in some region around the surfaces, mainly due to the exchange-correlation effect. In this study, the wavefunction penetration into the gate oxide and gate electrode has also been taken into account. Compared to the case without considering this penetration, the electron occupancy of each valley type markedly changes though no substantial difference in the drain current is observed.