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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Electrodeposition of Diamond-like Carbon Films on Silicon Substrates Using N,N-Dimethylformamid
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Electrodeposition of Diamond-like Carbon Films on Silicon Substrates Using N,N-Dimethylformamid

机译:N,N-二甲基甲酰胺在硅基底上电沉积类金刚石碳膜

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摘要

Diamond-like carbon (DLC) films were synthesized by an electrodeposition technique on silicon (Si) substrates using liquid N,N-dimethylformamid (DMF). The electrodeposition was performed in the temperature range from 40 to 80℃ and the applied voltage range from -1 kV to -5 kV. The structures of the films were characterized by Raman spectroscopy. The films with the electrical resistivity of about 10~(10) Ω·cm can be deposited using the liquid DMF under the liquid temperature of 80℃ and the applied voltage of -2 kV. Moreover, the current density has an important role in the deposition of the films.
机译:通过使用液体N,N-二甲基甲酰胺(DMF)在硅(Si)衬底上通过电沉积技术合成类金刚石碳(DLC)膜。电沉积在40至80℃的温度范围内,施加的电压在-1 kV至-5 kV范围内进行。膜的结构通过拉曼光谱法表征。在80℃的液体温度和-2 kV的施加电压下,可以使用液态DMF沉积电阻率为约10〜(10)Ω·cm的薄膜。此外,电流密度在膜的沉积中具有重要作用。

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