Modeling of Nonvolatile Memory Operation of Polysilicon-Oxide-Nitride-Oxide-Semiconductor and Analysis of Program Characteristics Dependent on the Trap Distribution in the Silicon-Nitride Layer

摘要

We performed modeling and simulations of polysilicon-oxide-nitride-oxide-semiconductor (SONOS) memory devices with traps for charge accumulation. Comparisons of the dependence of writing and erasing characteristics on the tunnel-SiO_2-layer thickness and SiN_x-layer thickness were made. Simulated results of erasing characteristics are in good agreement with the experimental results, but simulated results of writing characteristics are not. Moreover, we simulated the dependence of writing and erasing characteristics on the distribution of the trap density in the SiN_x layer, the dependence of writing characteristics on the doping density of polysilicon for the gate, and the dependence of the injection current and leakage current on the gate pulse duration.