Low-Voltage Operation of Vertical-Cavity Intensity Modulator Using InP-based Surface-Emitting Laser Structure

摘要

A vertical-cavity intensity modulator using a 1.55 μm surface-emitting laser (VCSEL) structure has been demonstrated. A contrast ratio of more than 10 dB with a low voltage of 1 V was obtained with an input light power of 1.9 dBm. The insertion loss was as low as 3.8 dB in the on state at a bias voltage of 1 V. The proposed device has potential for low insertion loss, low modulation voltage and polarization-insensitive operation.