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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >Synthesis of Diamond-like Carbon Films by Nanopulse Plasma Chemical Vapor Deposition at Subatmospheric Pressure
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Synthesis of Diamond-like Carbon Films by Nanopulse Plasma Chemical Vapor Deposition at Subatmospheric Pressure

机译:低于大气压的纳米脉冲等离子体化学气相沉积法合成类金刚石碳膜

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摘要

The deposition of diamond-like carbon (DLC) films at subatmospheric pressure has been achieved by the nanopulse plasma chemical vapor deposition (CVD) method. To realize this process, a high ion density and non-arcing plasma at subatmospheric pressure are required. A static induction (SI) thyristor with an inductive energy storage (IES) circuit was used. The DLC film was obtained under the conventional low-pressure process at 6 Pa, and the characteristics of the high electron temperature and the exponential relationship between pulse frequency and growth rate were observed. Deposition of the DLC film was also achieved at the subatmospheric pressure of 26.7 kPa (200 Torr) using this nanopulse plasma CVD method.
机译:通过纳米脉冲等离子体化学气相沉积(CVD)方法已实现了低于大气压的类金刚石碳(DLC)膜的沉积。为了实现该过程,需要在大气压下具有高离子密度和无电弧的等离子体。使用带有感应能量存储(IES)电路的静态感应(SI)晶闸管。 DLC膜是在6Pa的常规低压工艺下获得的,观察到高电子温度的特性以及脉冲频率与生长速率之间的指数关系。使用该纳米脉冲等离子体CVD方法,在低于大气压的26.7 kPa(200 Torr)下也可以沉积DLC膜。

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