Proposal of Selective Growth Technique Using Periodic Strain Field Caused by Misfit Dislocations

摘要

The selective growth technique using the strain field caused by misfit dislocations was proposed, and the growth of Ga droplets on an InAs/GaAs(110) system was demonstrated. It was found that the Ga droplets nucleate only on strain-relaxed InAs layers by generating misfit dislocations. In addition, nucleation sites on the InAs layers are localized on a region just above the dislocation line. It was clarified that the frequency of nucleation increases by about 4 times on the dislocation line.