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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Epitaxial Growth of MgO-doped Lithium Niobate Thin Films by Metalorganic Chemical Vapor Deposition
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Epitaxial Growth of MgO-doped Lithium Niobate Thin Films by Metalorganic Chemical Vapor Deposition

机译:金属有机化学气相沉积法外延生长MgO掺杂铌酸锂薄膜

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Epitaxial MgO-doped lithium niobate [LiNbO_3 (LN)] single-crystal thin films with a good surface morphology and crystallinity were grown on lithium tantalate [LiTaO_3 (LT)] substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). Dipivaloylmethanatolithium [Li(C_(11)H_(19)O_2); Li(DPM)], pentaethoxyniobium [Nb(OC_2H_5)_5; Nb(OEt)_5] and bisacetylacetonatomagnesium [Mg(C_5H_7O_2)_2; Mg(Acac)_2] were used as volatile metalorganic precursors. The crystallinity of the films was investigated by X-ray diffraction measurements. Reciprocal space mapping indicated that good epitaxial growth had been achieved. The film surface was sufficiently smooth to act as a waveguide. The ordinary and extraordinary refractive indices (n_o and n_e) of these as-grown MgO-doped LN thin films were measured to be n_o = 2.2844 and n_e = 2.1908 at 633 nm, respectively, which were close to those of 3mol% MgO-doped stoichiometric LN.
机译:通过低压金属有机化学气相沉积(MOCVD)在钽酸锂[LiTaO_3(LT)]衬底上生长具有良好表面形态和结晶度的外延掺杂MgO的铌酸锂[LiNbO_3(LN)]单晶薄膜。二戊甲酰基甲基锂[Li(C_(11)H_(19)O_2); Li(DPM)],五乙氧基铌[Nb(OC_2H_5)_5; Nb(OEt)_5]和双乙酰丙酮原子镁[Mg(C_5H_7O_2)_2; Mg(Acac)_2]用作挥发性金属有机前体。通过X射线衍射测量研究了膜的结晶度。相互空间映射表明已实现良好的外延生长。膜表面足够光滑以充当波导。这些成膜的MgO掺杂的LN薄膜的寻常折射率和非寻常折射率(n_o和n_e)在633 nm处的测量值分别为n_o = 2.2844和n_e = 2.1908,与3mol%的MgO掺杂的折射率接近。化学计量比

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