首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Investigation of Novel Microwave Surface-Acoustic-Wave Filter on Different Piezoelectric Substrates
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Investigation of Novel Microwave Surface-Acoustic-Wave Filter on Different Piezoelectric Substrates

机译:不同压电基板上新型微波表面声波滤波器的研究

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摘要

A novel GHz-band low-loss large-bandwidth microwave microstrip, surface-acoustic-wave (SAW) filter used in spread spectrum communication systems was designed and fabricated. The 16 μm input/output-interdigital-transducer (IDT) LiNbO_3 61.00MHz SAW filter, with microwave square open-loop resonators, has an insertion loss of -3.987 dB. This device can also be used as a 1.064 GHz microwave microstrip SAW filter with four cross-coupled microstrip square open-loop resonators and two planar interdigital capacitors. It was found that this novel device has an insertion loss (S_(21)) of - 2.962 dB, a reflection loss (S_(11)) of -25.497 dB and a 3 dB bandwidth of 800 MHz. The characteristics of these low-loss large-bandwidth (BW = 80%) microwave microstrip SAW filters are influenced by the interaction between electromagnetic waves and piezoelectric SAWs. To confirm this claim, devices of identical design were fabricated on the three types of substrate: ⅰ) 128°-rotated YX-cut lithium niobate (LiNbO_3) with a high electromechanical coupling coefficient (K~2 = 5.3%), ⅱ) GaAs S-I photo-piezoelectric material with a low electromechanical coupling coefficient (K~2 = 0.07%) and ⅲ) non-piezoelectric SiO_2/Si material with a thickness of 9000 A. The performances of these devices were significantly different. We will apply the principle of SAWs and the equivalent circuit of IDT to prove our experimental results.
机译:设计并制造了一种用于扩展频谱通信系统的新型GHz波段低损耗大带宽微波微带,表面声波(SAW)滤波器。具有微波方形开环谐振器的16μm输入/输出叉指换能器(IDT)LiNbO_3 61.00MHz SAW滤波器的插入损耗为-3.987 dB。该器件还可以用作1.064 GHz微波微带SAW滤波器,具有四个交叉耦合的微带方形开环谐振器和两个平面叉指电容器。已经发现,该新颖设备具有-2.962dB的插入损耗(S_(21)),-25.497dB的反射损耗(S_(11))和800MHz的3dB带宽。这些低损耗大带宽(BW = 80%)微波微带SAW滤波器的特性受电磁波和压电SAW之间相互作用的影响。为了证实这一主张,在三种类型的基板上制造了相同设计的器件:ⅰ)具有高机电耦合系数(K〜2 = 5.3%),ⅱ)GaAs的128°旋转YX切割铌酸锂(LiNbO_3)具有低机电耦合系数(K〜2 = 0.07%)和1/3)厚度为9000 A的非压电SiO_2 / Si材料的SI光电压电材料。这些器件的性能差异很大。我们将应用声表面波的原理和IDT的等效电路来证明我们的实验结果。

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