Growth of High-Quality Carbon Nanotubes by Grid-Inserted Plasma-Enhanced Chemical Vapor Deposition for Field Emitters

摘要

The effect of a grid inserted between the anode and the cathode in plasma-enhanced chemical vapor deposition (PECVD) on carbon nanotube (CNT) growth was studied. The optimum grid-cathode distance and grid-cathode voltage were 4 mm and 2-10 V, respectively. Long small-diameter nanotubes were grown under these conditions. The smallest nanotube diameter obtained was 3 nm. However, when the grid-cathode voltage was higher than 10 V, short large-diameter nanotubes were grown. The field emission characteristics of CNTs with a low ON voltage and a high current density were explained by Fowler-Nordheim (FN) tunneling.