Fabrication of High power, High-Efficiency Linear Array Diode Lasers by Pulse Anodic Oxidation

摘要

InGaAlAs/AlGaAs/GaAs double-quantum-well (DQW) linear array diode lasers with asymmetric wide waveguide have been successfully fabricated by pulse anodic oxidation upon molecular beam epitaxy material growth. High-efficiency and high-power quasi-continuous-wave (QCW) output has been realized at 808 nm wavelength. The threshold current and slope efficiency of the prepared high-fill-factor QCW devices are 24 A and 1.25 A/W, respectively, and a maximum wall-plug efficiency of 51% has been achieved. lasers; anodic oxidation; strained quantum well; linear array diode laser 6845-6848InGaAlAs/AlGaAs/GaAs double-quantum-well (DQW) linear array diode lasers with asymmetric wide waveguide have been successfully fabricated by pulse anodic oxidation upon molecular beam epitaxy material growth. High-efficiency and high-power quasi-continuous-wave (QCW) output has been realized at 808 nm wavelength. The threshold current and slope efficiency of the prepared high-fill-factor QCW devices are 24 A and 1.25 A/W, respectively, and a maximum wall-plug efficiency of 51% has been achieved.