Microstructural and Optical Properties of Semiconducting MnSi_(1.7) Synthesized by Ion Implantation

摘要

Semiconducting high manganese silicide (HMS) MnSi_(1.7) precipitates and thin films have been synthesized by ion implantation. High-resolution transmission electron microscopy (HRTEM) was employed to investigate the crystalline structures. The equilibrium phase of MnSi_(1.7), i.e., Mn_4Si_7, was synthesized in all samples. Optical absorption spectra obtained by transmission measurements demonstrated the existence of a direct band gap in all samples. The band gap energies varied ranging from 0.77 to 0.93 eV, possibly due to variation in the strain state associated with different microstructures.