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Application of BaTiO_3 Film Deposited by Aerosol Deposition to Decoupling Capacitor

机译:气溶胶沉积BaTiO_3薄膜在去耦电容器中的应用

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By using aerosol deposition, BaTiO_3 films of more than 0.5 μm thickness were fabricated at room temperature on metal substrates. The dielectric constant of the films was 80 and their tan & was 0.02 at 1 MHz. The change in the temperature characteristics of the capacitance of the films was rectilinear from room temperature to 180℃. The films were fabricated on the substrates with Ra values of 0.011 and 0.048 μm. The breakdown voltages of the films were measured: the maximum value was 220 V/μm. The volume resistivities of thin films depended on film thickness. They stabilized at a value of 10~(12) Ω-cm when the film thickness was 5μm or more. These electric properties are considered to depend on film density. We manufactured a noise-cutting probe with a decoupling capacitor as an inspection apparatus for microwave devices in trial production using the BaTiO_3 films fabricated by aerosol deposition. The contact probe had a 0.3 mm diameter, a 5 mm length, and a 6-μm-thick BaTiO_3 film on the outer surface. Its capacitance was 0.5 nF. Its withstand voltage was 700 V. These values are sufficient for this application.
机译:通过气溶胶沉积,在室温下在金属基底上制备了厚度大于0.5μm的BaTiO_3膜。薄膜的介电常数为80,在1 MHz下的tan为0.02。从室温到180℃,薄膜电容温度特性的变化是线性的。在具有0.011和0.048μm的Ra值的基板上制造膜。测量膜的击穿电压:最大值为220V /μm。薄膜的体积电阻率取决于薄膜的厚度。当膜厚度为5μm以上时,它们稳定在10〜(12)Ω-cm。这些电性能被认为取决于膜密度。我们使用气溶胶沉积制备的BaTiO_3膜制造了一种带有去耦电容器的降噪探头,作为微波设备的试制设备,用于试生产。接触探针的直径为0.3毫米,长度为5毫米,外表面有6μm厚的BaTiO_3膜。其电容为0.5 nF。它的耐压为700V。这些值对于该应用是足够的。

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