Effects Of Flat Hfo_2 Films Derived From Diethanolamine Solution On Structure And Properties Of Metal/ferroelectrics/insulator/semiconductor

摘要

HfO_2 films were prepared using precursor solutions with and without diethanolamine. The microstructure of HfO_2 films changed with the presence of diethanolamine. This result is thought to be due to the difference in the progress of organic decomposition and the behavior of nucleation and grain growth. The microstructure of HfO_2 films affected the crystallization and microstructure of Y_(0.5)Yb_(0.5)MnO_3 films on these HfO_2 films. The flatness of HfO_2 and Y_(0.5)Yb_(0.5)MnO_3 films was improved by the modification of HfO_2 precursor solutions with diethanolamine.